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1. Identity statement
Reference TypeBook Section
Siteplutao.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP3W/3RANFEF
Repositorysid.inpe.br/plutao/2018/06.18.15.25.52   (restricted access)
Last Update2018:06.20.12.07.16 (UTC) simone
Metadata Repositorysid.inpe.br/plutao/2018/06.18.15.25.53
Metadata Last Update2024:01.03.12.44.43 (UTC) simone
DOI10.5772/intechopen.70220
ISBN9789535138891
Labellattes: 8086526958304657 2 FornariForRapAbrTra:2018:MoCaSi
Citation KeyFornariForRapAbrTra:2018:MoCaSi
TitleMonte Carlo Simulation of Epitaxial Growth
Year2018
Access Date2024, May 18
Secondary TypePRE LI
Number of Files1
Size4702 KiB
2. Context
Author1 Fornari, Celso Israel
2 Fornari, Gabriel
3 Rappl, Paulo Henrique de Oliveira
4 Abramof, Eduardo
5 Travelho, Jerônimo dos Santos
Resume Identifier1
2
3 8JMKD3MGP5W/3C9JJ37
4 8JMKD3MGP5W/3C9JGUH
5 8JMKD3MGP5W/3C9JHE7
Group1 CMS-ETES-SESPG-INPE-MCTIC-GOV-BR
2 CAP-COMP-SESPG-INPE-MCTIC-GOV-BR
3 LABAS-COCTE-INPE-MCTIC-GOV-BR
4 LABAS-COCTE-INPE-MCTIC-GOV-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Instituto Nacional de Pesquisas Espaciais (INPE)
3 Instituto Nacional de Pesquisas Espaciais (INPE)
4 Instituto Nacional de Pesquisas Espaciais (INPE)
Author e-Mail Address1 celso.fornari@inpe.br
2 gabriel.fornari@inpe.br
3 paulo.rappl@inpe.br
4 eduardo.abramof@inpe.br
EditorZhong, M.
Book TitleEpitaxy
PublisherInTech
Pages113-129
History (UTC)2018-06-18 15:25:53 :: lattes -> administrator ::
2018-06-19 11:34:28 :: administrator -> lattes :: 2018
2018-06-20 12:07:17 :: lattes -> administrator :: 2018
2019-01-14 17:09:17 :: administrator -> simone :: 2018
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
KeywordsMonte Carlo simulation
molecular beam epitaxy
epitaxial growth
lattice-matched substrates
AbstractA numerical Monte Carlo (MC) model is described in detail to simulate epitaxial growth. This model allows the formation of structural defects, like substitutional defects and vacancies, and desorption of adsorbed atoms on the surface. The latter feature supports the study of epitaxial growth at very high kinetic regime. The model proposed here is applied to simulate the homoepitaxial growth of Si. The results obtained fit well to the experimental reports on (0 0 1) silicon homoepitaxy. The easy implementation of a large number of microscopic processes and the three-dimensional spatial information during the film growth suggests that the model can be applied to simulate the growth of binary, ternary, or more compounds and even the growth of superlattices and heterostructures.
AreaFISMAT
Arrangement 1urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Monte Carlo Simulation...
Arrangement 2urlib.net > BDMCI > Fonds > Produção pgr ATUAIS > CAP > Monte Carlo Simulation...
Arrangement 3urlib.net > BDMCI > Fonds > Produção pgr ATUAIS > CMS > Monte Carlo Simulation...
doc Directory Contentaccess
source Directory Contentthere are no files
agreement Directory Contentthere are no files
4. Conditions of access and use
Languagept
Target Filefornari_monte carlo.pdf
User Grouplattes
self-uploading-INPE-MCTI-GOV-BR
Reader Groupadministrator
simone
Visibilityshown
Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3F2PHGS
8JMKD3MGPCW/3F358GL
Citing Item Listsid.inpe.br/mtc-m21/2012/07.13.14.57.50 2
sid.inpe.br/bibdigital/2013/10.12.22.16 2
sid.inpe.br/bibdigital/2013/09.24.19.30 1
URL (untrusted data)http://www.intechopen.com/books/epitaxy/monte-carlo-simulation-of-epitaxial-growth
Host Collectiondpi.inpe.br/plutao@80/2008/08.19.15.01
6. Notes
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